vishay siliconix SUP90N03-03 document number: 74341 s12-0683-rev. b, 26-mar-12 www.vishay.com 1 for more information please contact: pmostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 30-v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2011/65/eu applications ? or-ing ? server ?dc/dc notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 sec. d. maximum under steady state conditions is 90 c/w. e. calculated based on maximum junction tem perature. package limitation current is 90 a. product summary v ds (v) r ds(on) ( ? ) i d (a) a, e q g (typ) 30 0.0029 at v gs = 10 v 90 82 nc 0.0033 at v gs = 4.5 v 90 to-220ab top view gds drain connected to tab ordering information: SUP90N03-03-e3 (lead (pb)-free) n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 90 a, e a t c = 70 c 90 e t a = 25 c 28.8 b, c t a = 70 c 27 b, c pulsed drain current i dm 90 avalanche current pulse l = 0.1 mh i as 36 single pulse avalanche energy e as 64.8 v continuous source-drain diode current t c = 25 c i s 90 a, e a t a = 25 c 3.13 b, c maximum power dissipation t c = 25 c p d 250 a w t c = 70 c 175 t a = 25 c 3.75 b, c t a = 70 c 2.63 b, c operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient b, d t ? 10 sec r thja 32 40 c/w maximum junction-to-case steady state r thjc 0.5 0.6
www.vishay.com 2 document number: 74341 s12-0683-rev. b, 26-mar-12 vishay siliconix SUP90N03-03 for more information please contact: pmostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient ? v ds /t j i d = 250 a 35 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 7.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 90 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 28.8 a 0.0024 0.0029 ? v gs = 4.5 v, i d = 27 a 0.0027 0.0033 forward transconductance a g fs v ds = 15 v, i d = 28.8 a 160 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 12065 pf output capacitance c oss 1725 reverse transfer capacitance c rss 970 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 28.8 a 171 257 nc v ds = 15 v, v gs = 4.5 v, i d = 28.8 a 81.5 123 gate-source charge q gs 34 gate-drain charge q gd 29 gate resistance r g f = 1 mhz 1.4 2.1 ? tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 0.625 ? i d ? 24 a, v gen = 10 v, r g = 1 ? 18 27 ns rise time t r 11 17 turn-off delay time t d(off) 70 105 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 0.67 ? i d ? 22.5 a, v gen = 4.5 v, r g = 1 ? 55 83 rise time t r 180 270 turn-off delay time t d(off) 55 83 fall time t f 12 18 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 90 a pulse diode forward current a i sm 90 body diode voltage v sd i s = 22 a 0.8 1.2 v body diode reverse recovery time t rr i f = 20 a, di/dt = 100 a/s, t j = 25 c 52 78 ns body diode reverse recovery charge q rr 70.2 105 nc reverse recovery fall time t a 27 ns reverse recovery rise time t b 25
document number: 74341 s12-0683-rev. b, 26-mar-12 www.vishay.com 3 vishay siliconix SUP90N03-03 for more information please contact: pmostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance 0 15 30 45 60 75 90 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 v thr u 4 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d v gs = 2 v v gs = 3 v 0 100 200 300 400 500 600 0 10203040506070 8 090 ) s ( e c n a t c u d n o c s n a r t - g s f i d - drain c u rrent (a) t c = - 55 c t c = 25 c t c = 125 c 0 3000 6000 9000 12 000 15 000 0 6 12 1 8 24 30 v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c c iss c oss c rss transfer characteristics r ds(on) vs. drain current gate charge 0.0 0.6 1.2 1. 8 2.4 3.0 01234 v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d t c = 25 c t c = - 55 c t c = 125 c 0.0020 0.0022 0.0024 0.0026 0.002 8 0.0030 0.0032 0 153045607590 i d - drain c u rrent (a) r ds(on) e ( ) c n a t s i s e r - n o ? v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 3060901201501 8 0 ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v gs i d = 2 8 . 8 a v ds = 24 v v ds = 15 v
www.vishay.com 4 document number: 74341 s12-0683-rev. b, 26-mar-12 vishay siliconix SUP90N03-03 for more information please contact: pmostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature r ds(on) vs. v gs vs. temperature 0.6 0. 8 1.0 1.2 1.4 1 . 6 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temperat u re (c) v gs = 10 v , i d = 2 8 . 8 a r ) n o ( s d istance s e r - n o - ) d e z i l a m r o n ( v gs = 4.5 v , i d = 27 a 0.000 0.001 0.002 0.003 0.004 0.005 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) r ds(on ) - e ( ) c n a t s i s e r - n o i d = 2 8 . 8 a t a = 125 c t a = 25 c forward diode voltage vs. temperature threshold voltage 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1 ) a ( t n e r r u c e c r u o s - i s v sd - so u rce-to-drain v oltage ( v ) t j = 25 c t j = 150 c 0. 8 1.2 1.6 2.0 2.4 2. 8 - 50 - 25 0 25 50 75 100 125 150 175 ) v ( e c n a i r a v v ) h t ( s g t j - temperat u re (c) i d = 250 a safe operating area, junction-to-ambient 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 t a = 25 c single pulse - drain current (a) i d dc 10 s 1 s 100 ms 10 ms *limited by r ds (on) v ds - drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
document number: 74341 s12-0683-rev. b, 26-mar-12 www.vishay.com 5 vishay siliconix SUP90N03-03 for more information please contact: pmostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) *the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74341 current derating* 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) package limited power derating 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 c - case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p t normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normalized eff ective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02
package information www.vishay.com vishay siliconix revison: 16-jun-14 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c d2 millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 d2 12.19 12.70 0.480 0.500 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t14-0413-rev. p, 16-jun-14 dwg: 5471
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